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ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT. (215TH ECS MEETING)

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT. (215TH ECS MEETING)

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ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT. (215TH ECS MEETING)
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Product Description
Title:Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment
Desc:Proceedings of a meeting held 24-29 May 2009, San Francisco, California, USA. 215th ECS Meeting
Series:ECS Transactions Volume 19 No.01
Editor:Narayanan, V. et al.
ISBN:9781607680598
Pages:353 (1 Vol)
Format:Softcover
TOC:View Table of Contents
Publ:Electrochemical Society ( ECS )
POD Publ:Curran Associates, Inc. ( May 2017 )
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