PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS III. (2 PARTS) (208TH ECS MEETING)

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039919
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  • Title: Physics and Technology of High-k Gate Dielectrics III
  • Subtitle: 208th ECS Meeting
  • Date/Location: Held 16-21 October 2005, Los Angeles, California.
  • Series: ECS Transactions Volume 1 No.05
  • Editor: Kar, S. et al.
  • ISBN: 9781566774444
  • Pages: 796 (2 Vols)
  • Format: Softcover
  • TOC Link: View Table of Contents
  • Publisher: Electrochemical Society (ECS)
  • POD Publisher: Curran Associates, Inc. ( Jul 2018 )

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Tab 4

 
  • Title: Physics and Technology of High-k Gate Dielectrics III
  • Subtitle: 208th ECS Meeting
  • Date/Location: Held 16-21 October 2005, Los Angeles, California.
  • Series: ECS Transactions Volume 1 No.05
  • Editor: Kar, S. et al.
  • ISBN: 9781566774444
  • Pages: 796 (2 Vols)
  • Format: Softcover
  • TOC Link: View Table of Contents
  • Publisher: Electrochemical Society (ECS)
  • POD Publisher: Curran Associates, Inc. ( Jul 2018 )