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ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 2: NEW MATERIALS, PROCESSES, AND EQUIPMENT (210TH ECS MEETING)

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 2: NEW MATERIALS, PROCESSES, AND EQUIPMENT (210TH ECS MEETING)

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ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 2: NEW MATERIALS, PROCESSES, AND EQUIPMENT (210TH ECS MEETING)
Item #: 40278
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Product Description
Title:Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment
Desc:Proceedings of a meeting held 30 October - 2 November 2006, Cancun, Mexico. 210th ECS Meeting
Series:ECS Transactions Volume 3 No.02
Editor:Roozeboom, F. et al.
ISBN:9781510866508
Pages:460 (1 Vol)
Format:Softcover
TOC:View Table of Contents
Publ:Electrochemical Society ( ECS )
POD Publ:Curran Associates, Inc. ( Aug 2018 )
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