ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 2: NEW MATERIALS, PROCESSES, AND EQUIPMENT (210TH ECS MEETING)

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 2: NEW MATERIALS, PROCESSES, AND EQUIPMENT (210TH ECS MEETING)

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  • Title: Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment
  • Subtitle: 210th ECS Meeting
  • Date/Location: Held 30 October - 2 November 2006, Cancun, Mexico.
  • Series: ECS Transactions Volume 3 No.02
  • Editor: Roozeboom, F. et al.
  • ISBN: 9781510866508
  • Pages: 460 (1 Vol)
  • Format: Softcover
  • TOC Link: View Table of Contents
  • Publisher: Electrochemical Society (ECS)
  • POD Publisher: Curran Associates, Inc. ( Aug 2018 )

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  • Title: Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment
  • Subtitle: 210th ECS Meeting
  • Date/Location: Held 30 October - 2 November 2006, Cancun, Mexico.
  • Series: ECS Transactions Volume 3 No.02
  • Editor: Roozeboom, F. et al.
  • ISBN: 9781510866508
  • Pages: 460 (1 Vol)
  • Format: Softcover
  • TOC Link: View Table of Contents
  • Publisher: Electrochemical Society (ECS)
  • POD Publisher: Curran Associates, Inc. ( Aug 2018 )