PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 4. (210TH ECS MEETING)

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040279
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Details

  • Title: Physics and Technology of High-k Gate Dielectrics 4
  • Subtitle: 210th ECS Meeting
  • Date/Location: Held 30 October - 2 November 2006, Cancun, Mexico.
  • Series: ECS Transactions Volume 3 No.03
  • Editor: Kar, S. et al.
  • ISBN: 9781510866515
  • Pages: 547 (1 Vol)
  • Format: Softcover
  • TOC Link: View Table of Contents
  • Publisher: Electrochemical Society (ECS)
  • POD Publisher: Curran Associates, Inc. ( Aug 2018 )

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Tab 4

 
  • Title: Physics and Technology of High-k Gate Dielectrics 4
  • Subtitle: 210th ECS Meeting
  • Date/Location: Held 30 October - 2 November 2006, Cancun, Mexico.
  • Series: ECS Transactions Volume 3 No.03
  • Editor: Kar, S. et al.
  • ISBN: 9781510866515
  • Pages: 547 (1 Vol)
  • Format: Softcover
  • TOC Link: View Table of Contents
  • Publisher: Electrochemical Society (ECS)
  • POD Publisher: Curran Associates, Inc. ( Aug 2018 )