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ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT (217TH ECS MEETING)

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT (217TH ECS MEETING)

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ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT (217TH ECS MEETING)
Item #: 40299
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Product Description
Title:Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment
Desc:Proceedings of a meeting held 25-30 April 2010, Vancouver, Canada. 217th ECS Meeting
Series:ECS Transactions Volume 28 No.01
Editor:Gusev, E. P. et al.
ISBN:9781510866713
Pages:412 (1 Vol)
Format:Softcover
TOC:View Table of Contents
Publ:Electrochemical Society ( ECS )
POD Publ:Curran Associates, Inc. ( Aug 2018 )
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