ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 4: NEW MATERIALS, PROCESSES, AND EQUIPMENT. (213TH ECS MEETING)

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 4: NEW MATERIALS, PROCESSES, AND EQUIPMENT. (213TH ECS MEETING)

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  • Title: Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment
  • Subtitle: 213th ECS Meeting
  • Date/Location: Held 18-22 May 2008, Phoenix, Arizona, USA.
  • Series: ECS Transactions Volume 13 No.01
  • Editor: Timans, P. J. et al.
  • ISBN: 9781713819653
  • Pages: 474 (1 Vol)
  • Format: Softcover
  • TOC Link: View Table of Contents
  • Publisher: Electrochemical Society (ECS)
  • POD Publisher: Curran Associates, Inc. ( Nov 2020 )

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  • Title: Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment
  • Subtitle: 213th ECS Meeting
  • Date/Location: Held 18-22 May 2008, Phoenix, Arizona, USA.
  • Series: ECS Transactions Volume 13 No.01
  • Editor: Timans, P. J. et al.
  • ISBN: 9781713819653
  • Pages: 474 (1 Vol)
  • Format: Softcover
  • TOC Link: View Table of Contents
  • Publisher: Electrochemical Society (ECS)
  • POD Publisher: Curran Associates, Inc. ( Nov 2020 )