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ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 4: NEW MATERIALS, PROCESSES, AND EQUIPMENT. (213TH ECS MEETING)

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 4: NEW MATERIALS, PROCESSES, AND EQUIPMENT.   (213TH ECS MEETING)

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ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 4: NEW MATERIALS, PROCESSES, AND EQUIPMENT. (213TH ECS MEETING)
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Product Description
Title:Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment
Desc:Proceedings of a meeting held 18-22 May 2008, Phoenix, Arizona, USA. 213th ECS Meeting
Series:ECS Transactions Volume 13 No.01
Editor:Timans, P. J. et al.
ISBN:9781713819653
Pages:474 (1 Vol)
Format:Softcover
TOC:View Table of Contents
Publ:Electrochemical Society ( ECS )
POD Publ:Curran Associates, Inc. ( Nov 2020 )
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