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ADVANCED GATE STACK, SOURCE/DRAIN AND CHANNEL ENGINEERING FOR SI-BASED CMOS 3: NEW MATERIALS, PROCESSES AND EQUIPMENT (211TH ECS MEETING)

ADVANCED GATE STACK, SOURCE/DRAIN AND CHANNEL ENGINEERING FOR SI-BASED CMOS 3: NEW MATERIALS, PROCESSES AND EQUIPMENT (211TH ECS MEETING)

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ADVANCED GATE STACK, SOURCE/DRAIN AND CHANNEL ENGINEERING FOR SI-BASED CMOS 3: NEW MATERIALS, PROCESSES AND EQUIPMENT (211TH ECS MEETING)
Item #: 56479
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Product Description
Title:Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3: New Materials, Processes and Equipment
Desc:Proceedings of a meeting held 6-10 May 2007, Chicago, Illinois, USA 211th ECS Meeting
Series:ECS Transactions Volume 6 No.01
Editor:Ozturk, M. et al.
ISBN:9781713819561
Pages:470 (1 Vol)
Format:Softcover
TOC:View Table of Contents
Publ:Electrochemical Society ( ECS )
POD Publ:Curran Associates, Inc. ( Nov 2020 )
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