ADVANCED GATE STACK, SOURCE/DRAIN AND CHANNEL ENGINEERING FOR SI-BASED CMOS 3: NEW MATERIALS, PROCESSES AND EQUIPMENT (211TH ECS MEETING)

ADVANCED GATE STACK, SOURCE/DRAIN AND CHANNEL ENGINEERING FOR SI-BASED CMOS 3: NEW MATERIALS, PROCESSES AND EQUIPMENT (211TH ECS MEETING)

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056479
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  • Title: Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3: New Materials, Processes and Equipment
  • Subtitle: 211th ECS Meeting
  • Date/Location: Held 6-10 May 2007, Chicago, Illinois, USA
  • Series: ECS Transactions Volume 6 No.01
  • Editor: Ozturk, M. et al.
  • ISBN: 9781713819561
  • Pages: 470 (1 Vol)
  • Format: Softcover
  • TOC Link: View Table of Contents
  • Publisher: Electrochemical Society (ECS)
  • POD Publisher: Curran Associates, Inc. ( Nov 2020 )

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  • Title: Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3: New Materials, Processes and Equipment
  • Subtitle: 211th ECS Meeting
  • Date/Location: Held 6-10 May 2007, Chicago, Illinois, USA
  • Series: ECS Transactions Volume 6 No.01
  • Editor: Ozturk, M. et al.
  • ISBN: 9781713819561
  • Pages: 470 (1 Vol)
  • Format: Softcover
  • TOC Link: View Table of Contents
  • Publisher: Electrochemical Society (ECS)
  • POD Publisher: Curran Associates, Inc. ( Nov 2020 )